R2G Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE DIODE

R2G
Avalanche Diodes
VRM : 115 Volts
IZSM : 1.0 Amp. ( 100 µs )
DO - 15
Features
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
Mechanical Data
* Case : DO-15 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.39 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Peak Reverse Voltage
SYMBOL
VRM
Maximum DC Blocking Reverse Voltage
VDC
Minimum Avalanche Breakdown Voltage at IZ = 1mA
VBR(min)
Maximum Avalanche Breakdown Voltage at IZ = 1mA
VBR(max)
Maximum Allowable Avalanche Current (Note 1)
IZSM
Maximum Reverse Current at VRM
Ta = 25°C
IR
Maximum Reverse Current at VRM
Ta = 100°C
IR(H)
Typical Avalanche Voltage Temperature Coefficient at Iz = 1mA
Junction Temperature Range
TJ
Storage Temperature Range
TSTG
Notes :
(1) 100µs Square pulse, One shot.
VALUE
115
115
120
145
1.0
10
50
+0.15
- 40 to + 130
- 40 to + 150
UNIT
V
V
V
V
A
µA
µA
V/°C
°C
°C
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