PMEG2005AEA Datasheet, PDF (1/5 Pages) NXP Semiconductors – Very low VF MEGA Schottky barrier rectifiers

PMEG2005AEA THRU PMEG4005AEA
Schottky barrier rectifiers
SOD-323
FEATURES
Very low forward voltage
High surge current
Very small plastic SMD package.
APPLICATIONS
Low voltage rectification
High efficiency DC/DC conversion
Voltage clamping
Inverse polarity protection
Low power consumption applications.
Dimensions in inches and (millimeters)
RELATED PRODUCTS
TYPE NUMBER
PMEGxx05AEV
PMEG2005EB
PMEG2010EA
DESCRIPTION
FEATURE
0.5 A; 20/30/40 V very low V_F MEGA Schottky rectifier SOT666 package
0.5 A; 20 V very low V_F MEGA Schottky rectifier
smaller SOD523 (SC-79) package
1 A; 20 V very low V_F MEGA Schottky rectifier
higher forward current
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V_R
continuous reverse voltage
PMEG2005AEA
−
20
V
PMEG3005AEA
−
30
V
PMEG4005AEA
−
40
V
I_F
continuous forward current
note 1
−
0.5
A
I_FRM
repetitive peak forward current
t_p ≤ 1 ms; δ ≤ 0.5
−
3.5
A
I_FSM
non-repetitive peak forward current
t_p = 8 ms; square wave
−
10
A
T_j
junction temperature
note 2
−
150
°C
T_amb
operating ambient temperature
note 2
−65
+150
°C
T_stg
storage temperature
−65
+150
°C
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P_R are a significant part of the total power losses. Nomograms for determination of the reverse power losses P_R and
I_F(AV) rating will be available on request.
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