MUR160 Datasheet, PDF (1/3 Pages) Comchip Technology – Efficient Fast Rectifier Diode

MUR120-MUR190
Super Fast Rectifiers
VOLTAGE RANGE: 200 --- 900 V
CURRENT: 1.0 A
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
Mechanical Data
Cas e:JEDEC DO--41,m olded plas tic
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
DO - 41
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
MUR MUR
120 130
MUR MUR MUR
140 150 160
MUR
170
MUR
180
MUR _UNITS
190
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM 200 300 400 500 600 700 800 900
V
V_RMS 140 210 280 350 420 490 560 630
V
V_DC 200 300 400 500 600 700 _{800 900}
V
Maximum average f orw ard rectif ied current
9.5mm lead length,
@ T_A =7 5
I_{F (AV )}
1.0
A
Peak f orw ard surge current
8.3ms single half -sine-w ave
I_{F S M}
35.0
A
superimposed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 1.0A
V_F 0.875
1.25
1.7
V
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
2.0
I_R
50
Maximum reverse recovery time (Note1)
t_rr
25
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
N OTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH z and applied rev erse v oltage of 4.0V D C .
3. Therm al res istanc e f rom junction to am bient.
5.0
150
50
22
50
- 55 ----- + 150
- 55 ----- + 150
10.0
A
100
75
ns
15
pF
60
/W
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