MBSK16S Datasheet, PDF (1/2 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – Schottky Bridge Rectifier

MBSK12S THRU MBSK110S
Schottky Bridge Rectifier
Features
I_o 1.0A
V_RRM 20V~100V
Schottky chip
High surge forward current capability
Low VF
Applications
General purpose 1 phase Bridge
rectifier applications
Limiting Values（Absolute Maximum Rating）
Item
Symbol Unit
Conditions
Repetitive Peak Reverse
Voltage
V_RRM
V
4.6 0.2
MBS
3.8 0.2
0.6 0.1
2.5 0.25
1.0 0.15
6.8 0.2
0.3 0.1
Dimensions in millimeters
MBSK
12S 14S 16S 18S 110S
20 40 60 80 100
Average Rectified Output
Current
On alumina substrate
I_O
A
60Hz sine wave,
R-load, Ta=25℃
On glass-epoxi substrate
1.0
0.8
Surge(Non-
repetitive)Forward Current
I_FSM
A
60H_Z sine wave, 1 cycle, T_j=25℃
40
Current Squared Time
I²t
A²S
1ms≤t<8.3ms Tj=25℃，Rating of per diode
6.6
Storage Temperature
Junction Temperature
T_stg
℃
T_j
℃
-55 ~+150
-55 ~+150
Electrical Characteristics（T_a=25℃ Unless otherwise specified）
Item
Peak Forward Voltage
Symbol Unit
V_FM
V
Test Condition
I_FM=0.5A,
Pulse measurement, Rating of per diode
Max
0.55
0.65
0.85
Peak Reverse Current
I_RRM
mA ^{VRM=VRRM , Pulse measurement, Rating of per diode}
0.5
Between junction and ambient, On alumina substrate
76
R_θJ-A
Thermal Resistance
℃/W
Between junction and ambient, On glass-epoxi
substrate
134
R_θJ-L
Between junction and lead
20
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