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MBSK110S Datasheet, PDF (1/2 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – Schottky Bridge Rectifier | |||
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MBSK12S THRU MBSK110S
Schottky Bridge Rectifier
Features
Io 1.0A
VRRM 20V~100V
Schottky chip
High surge forward current capability
Low VF
Applications
General purpose 1 phase Bridge
rectifier applications
Limiting Valuesï¼Absolute Maximum Ratingï¼
Item
Symbol Unit
Conditions
Repetitive Peak Reverse
Voltage
VRRM
V
4.6 0.2
MBS
3.8 0.2
0.6 0.1
2.5 0.25
1.0 0.15
6.8 0.2
0.3 0.1
Dimensions in millimeters
MBSK
12S 14S 16S 18S 110S
20 40 60 80 100
Average Rectified Output
Current
On alumina substrate
IO
A
60Hz sine wave,
R-load, Ta=25â
On glass-epoxi substrate
1.0
0.8
Surge(Non-
repetitive)Forward Current
IFSM
A
60HZ sine wave, 1 cycle, Tj=25â
40
Current Squared Time
I2t
A2S
1msâ¤t<8.3ms Tj=25âï¼Rating of per diode
6.6
Storage Temperature
Junction Temperature
Tstg
â
Tj
â
-55 ~+150
-55 ~+150
Electrical Characteristicsï¼Ta=25â Unless otherwise specifiedï¼
Item
Peak Forward Voltage
Symbol Unit
VFM
V
Test Condition
IFM=0.5A,
Pulse measurement, Rating of per diode
Max
0.55
0.65
0.85
Peak Reverse Current
IRRM
mA VRM=VRRM , Pulse measurement, Rating of per diode
0.5
Between junction and ambient, On alumina substrate
76
RθJ-A
Thermal Resistance
â/W
Between junction and ambient, On glass-epoxi
substrate
134
RθJ-L
Between junction and lead
20
http://www.luguang.cn
mail:lge@luguang.cn
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