MBRF1035 Datasheet, PDF (1/2 Pages) General Semiconductor – SCHOTTKY ISOLATED PLASTIC RECTIFIER

MBRF1035 - MBRF10150
Isolated 10.0 AMPS. Schottky Barrier Rectifiers
ITO - 220AC
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260^oC/10 seconds,0.25”(6.35mm)from case
10.2± 0.2
4.5± 0.2
3.1^+-00..12
PIN
1
2
4.0± 0.3
1.4± 0.1
2.6± 0.2
Mechanical Data
0.6± 0.1
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
5.0± 0.1
0.6± 0.1
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125^oC
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125^oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Symbol
VRRM
VRMS
VDC
I(AV)
IFRM
IFSM
MBRF
1035
35
24
35
MBRF
1045
45
31
45
MBRF
1050
50
35
50
MBRF
1060
60
42
60
10
32
150
MBRF
1090
90
63
90
MBRF
10100
100
70
100
MBRF
10150
150
105
150
Units
V
V
V
A
A
A
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=10A, TC=25^oC
IF=10A, TC=125^oC
IF=20A, TC=25^oC
IF=20A, TC=125^oC
0.70
VF
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.85
1.05
0.71
－
V
－
－
－
－
Maximum Instantaneous Reverse Current
@ Tc =25 ^oC at Rated DC Blocking Voltage
@ Tc=125 ^oC (Note 2)
IR
0.1
15
10
0.1
mA
6.0
mA
Voltage Rate of Change (Rated VR)
Typical Junction Capacitance
Maximum Typical Thermal Resistance(Note 3)
Operating Junction Temperature Range
Storage Temperature Range
dV/dt
Cj
R_θJC
TJ
TSTG
10,000
500
3.0
-65 to +150
-65 to +175
V/uS
pF
o_C/W
o_C
o_C
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
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