MBRF1030 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SCHOTTKY BARRIER RECTIFIER

MBRF1030-MBRF10100
Schottky Barrier Rectifiers
VOLTAGE RANGE: 30 - 100 V
CURRENT: 10 A
Features
High s urge capacity.
For us e in low voltage, high frequency inverters , free
11 1wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
Mechanical Data
Cas e:JEDEC ITO-220AC,m olded plas tic body
Polarity: As m arked
Pos ition: Any
Weight: 0.056 ounces,1.587 gram
ITO-220AC
10.2± 0.2
4.5± 0.2
3.1^+-00..12
PIN
1
2
4.0± 0.3
1.4± 0.1
0.6± 0.1
5.0± 0.1
2.6± 0.2
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF
1030
MBRF
1035
MBRF MBRF MBRF MBRF MBRF MBRF
1040 1045 1050 1060 1090 10100
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
V_RRM 30
35
40
45
50
60
90 100
V
V _{R MS}
21
25
28
32
35
42
63
70
V
V_DC
30
35
40
45
50
60
90 100
V
Maximum average forw ard total device
m rectif ied current @T_C = 133°C
I_F(AV)
10
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
I_FSM
150
A
Maximum forw ard
v oltage
(Note 1)
(I_F=10A,T_C=25 )
(I_F=10A,T_C=125 )
(I _F=20A ,T_C=25 )
(I_F=20A ,T_C=125 )
Maximum reverse current
@T =25
C
at rated DC blocking voltage @T_C=125
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.T_C=100
V_F
I_R
R _θJC
T_J
T_STG
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.1
15
4.0
- 55 ---- + 150
- 55 ---- + 175
0.80
0.65
0.95
0.75
6.0³⁾
V
mA
/W
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