MBR20H100CT Datasheet, PDF (1/2 Pages) Vishay Siliconix – Dual High-Voltage Schottky Rectifiers

MBR20H100CT-MBR20H200CT
20.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
— Plastic material used carries Underwriters
Laboratory Classifications 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in power supply – output rectification, power
management, instrumentation
— Guardring for overvoltage protection
— High temperature soldering guaranteed:
260^oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
— Cases: JEDEC TO-220AB molded plastic body
— Polarity: As marked
— Mounting position: Any
— Mounting torque: 5 in. - lbs. max
— Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBR
20H100CT
MBR
20H150CT
MBR
20H200CT
Maximum Recurrent Peak Reverse Voltage
V_RRM
100
150
200
Maximum RMS Voltage
V_RMS
70
105
140
Maximum DC Blocking Voltage
V_DC
100
150
200
Maximum Average Forward Rectified Current
at Tc=125^OC
I_(AV)
20
Peak Repetitive Forward Current (Rated V_R,
Square Wave, 20KHz) at Tc=125^oC
I_FRM
20
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC I_FSM
150
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
I_F=10A, T_C=25^oC
I_F=10A, T_C=125^oC
I_F=20A, T_C=25^oC
I_F=20A, T_C=125^oC
I_RRM
V_F
1.0
0.85
0.75
0.95
0.85
0.5
0.88
0.75
0.97
0.85
Maximum Instantaneous Reverse Current
@ Tc =25 ^oC at Rated DC Blocking Voltage
I_R
5
@ Tc=125 ^oC (Note 2)
2.0
Voltage Rate of Change (Rated V_R)
dV/dt
10,000
Maximum Typical Thermal Resistance (Note 3)
R_θJC
1.5
Units
V
V
V
A
A
A
A
V
uA
mA
V/uS
o_C/W
Operating Junction Temperature Range
T_J
-65 to +175
o_C
Storage Temperature Range
T_STG
-65 to +175
o_C
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in
Al-Plate.
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