MA700A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

MA700A
Small Signal Schottky Diodes
Features
Low forward voltage drop
Satis fory wave detection efficiency
Extremely low revers e current IR
Small temperature coefficient of forward
ffff ff characteristics
Extremely low revers e current
Thes e products are ideal for us e in ordinary wave
detection and super high speed switching circuits
VOLTAGE RANGE: 30 V
CURRENT: 0.03 A
DO - 35(GLASS)
Mechanical Data
Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end
Poduct Sign:Marking MA700A on body
Weight: Approx. 0.13 gram
Dimensions in millimeters
ABSOLUTE RATINGS (LIMITING VALUES)
Parameters
(TA=25 )
Symbols
Value
UNITS
Reverse voltage
V_R
30.0
V
Peak reverse voltage
Average rectified current
Peak forw ard current
Junction temperature
Storage temperature
V_RM
I_O
I_FM
T_J
T_STG
30.0
30.0
150.0
125
XX- 55 ---- + 150
ELECTRICAL CHARACTERISTICS
(TA=25 )
Parameters
Symbols
Test Conditions
Min. Typ.
Forw ard voltage(DC)
Reverse current
V_F
I_F=1m A
I_F=30mA
I_R
VR=30V
Junction capacitance
C_J
VR=1V f=1MHz
1.3
Rectifier efficiency
V_l=3V f=30MHz
C_L=10pF R_L=3.9K
60.0
Reverse recovery time
t_rr
I_F=I_R=10mA
t_rr=1mA R_c=100k
1
NOTE: 1. Schottky barrier rectif ier diode is sensitiv e to electric shock(static electricity .etc.).Due attention must be paid on charge
H
of a human body and leakage f rom the equipment used.
Max.
0.4
1.0
150
V
mA
mA
UNITS
V
nA
pF
%
ns
http://www.luguang.cn
mail:[e-mail]