LL5711 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SCHOTTKY BARRIER SWITCHING DIODE

LL5711/LL6263
Schottky Barrier Diode
MINI MELF
Features
— _{For general purpose applications.}
— Metal-on-silicon schottky barrier device which is
protected by a PN junction guard ring. The low
forward voltage drop and fast switching make it
ideal for protection of MOS devices, steering,
biasing and coupling diodes for fast switching and
low logic level applications.
Dimension in millimeters
Absolute Maximum Ratings (T_j=25℃)
Parameter
Peak inverse voltage
Maximum single cycle surge 10us square wave
Power dissipation
Maximum junction temperature
Storage temperature range
Part
Symbol
Value
Unit
LL5711
V_RRM
70
V
LL6263
V_RRM
60
V
I_FSM
2.0
A
P_tot
400
mW
T_j
125
℃
T_S
-55~+150
℃
Electrical Characteristics(T_j=25℃)
Parameter
Symbol
Test Conditions
Part Min Typ Max Unit
Reverse breakdown
voltage
V_(BR)R I_R=10μA (pulsed)
LL5711 70 -
-
V
LL6263 60 -
-
V
Leakage current
Forward voltage drop
Junction capacitance
I_R
V_R=50V
V_F
I_F=1mA
I_F=15mA
C_tot V_R=0V, f=1MHz
-
-
-
LL5711 -
LL6263 -
- 200 nA
- 0.41 V
- 1.0 V
- 2.0 pF
- 2.2 pF
Reverse recovery time
t_rr
I_F= I_R=5mA recover to 0.1 I_R
-
- 1.0 ns
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
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