LL4150 Datasheet, PDF (1/1 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

LL4150
Fast Switching Surface Mount Diode
MINI MELF
Features
Ideal for Fast Logic Applications
Ultra Fast Switching
High Reliability
High Conductance
Mechanical Data
Case: MiniMELF, Glass
Marking: Cathode Band Only
Polarity: Cathode Band
Weight: 0.12 grams (approx.)
Dimension in millimeters
Maximum Ratings and Electrical Characteristics
Rating at 25^oC ambient temperature unless otherwise specified.
Maximum Ratings
Characteristic
Symbol
LL4150
Unit
Non-Repetitive Peak Reverse Voltage
@ 5.0mA
VRM
75
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V_RWM
50
V
V_R
RMS Reverse Voltage
V_R(RMS)
35
V
Forward Continuous Current (Note 1)
I_FM
400
mA
Average Rectified Output Current (Note 1)
I_O
200
mA
Repetitive Peak Forward Current (Note 1)
I_FRM
600
mA
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
@ t = 1.0ms
I_FSM
1.0
4.0
A
Power Dissipation (Note 1)
P_d
500
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R_qJA
300
K/W
Operating and Storage Temperature Range
T_j, T_STG
-65 to +200
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage Drop
Maximum Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Forward Recovery Time
Symbol
V_FM
I_RM
C_j
t_rr
t_fr
Min
0.54
0.66
0.76
0.82
0.87
¾
¾
¾
¾
Max
0.62
0.74
0.86
0.92
1.00
100
2.5
4.0
10
Unit
V
nA
mA
pF
ns
ns
Test Condition
IF = 1.0mA
I_F = 10mA
I_F = 50mA
I_F = 100mA
I_F = 200mA
TA = 25°C
T_A = 150°C
V_R = 0V, f = 1.0MHz
I_F = I_R = 200mA,
I_rr = 0.1 x I_R, R_L = 100W
I_F = 200mA, V_FR = 1.0V
Note: 1. Valid provided that electrodes are kept at ambient temperature.
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