LL103A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diode for general purpose applications

LL103A-LL103C
Small Signal Schottky Diodes
Features
For general purpose applications
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
Mechanical Data
Case:JEDEC MINI-MELF
Polarity: Color band denotes cathode end
Weight: Approx. 0.031 gram
VOLTAGE RANGE: 40 -- 20 V
CURRENT: 400 mW
MINI-MELF
Cathode indification
3.4 +0.3
-0.1
0.4 0.1
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols _LL103A
LL103B
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Single cycle surge 60Hz sine w ave
Forward continuous current
V_RRM
40
P_tot
I _FSM
I(AV)
30
400¹⁾
15
200
Junction tenperature
T_J
125
Storage temperature range
T_STG
-55 ---+ 150
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
LL103C
20
UNITS
V
mW
A
mA
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Reverse breakdow n voltage
@ I_R=50 A LL103A
LL103B
LL103C
Leakage current @ V_R=50V
LL103A,VR=30V
LL103B,VR=20V
LL103C,VR=10V
Forw ard voltage drop @ I _F=20mA
I _F=200mA
Junction capacitance @ V_R=0V,f=1MHz
Reverse recovery time @ I_{F=IR=50mAto200mA,recover to0.1IR}
Thermal resistance junction to ambient air
Symbols
V_R
I_R
V_F
C_J
t_rr
R_θJA
Min.
40
30
20
-
-
-
-
-
Typ.
-
-
-
50
10
250
Max.
-
5.0
0.37
0.6
-
-
-
UNITS
V
A
V
pF
ns
K/W
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