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| LGA1266 Datasheet, PDF (1/2 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – Excellent hFE Linearity | |||
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Features
Excellent hFE Linearity
Low noise
1. EMITTER
2. COLLECTOR
3. BASE
LGA1266(PNP)
TO-92 Transistors
TO-92
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous -0.15
A
PC
Collector Power Dissipation
625
mW
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
CLASSIFICATION OF hFE(1)
Rank
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
NF
O
Test conditions
IC =-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA
VCB=-10V, IE=0, f=1MHz
VCE=-6V, Ic=-0.1mA,
f=1KHZ, Rg=10Kâ¦
Y
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-0.1 μA
-0.1 μA
70
400
25
-0.3
V
-1.1
V
80
MHz
7
pF
10
dB
GR
Range
70-140
120-240
200-400
Marking
http://www.luguang.cn
mail:lge@luguang.cn
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