KBJ6005 Datasheet, PDF (1/2 Pages) HY ELECTRONIC CORP. – SILICON BRIDGE RECTIFIERS

KBJ6005-KBJ610
Silicon Bridge Rectifiers
REVERSE VOLTAGE - 50 to 1000Volts
FORWARD CURRENT - 6.0 Amperes
KBJ
? .134(3.4)
? .122(3.1)
Features
— Rating to 1000V PRV
— Ideal for printed circuit board
— Low forward voltage drop,high current capability
— Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
— The plastic material has U/L flammability
classification 94V-0
+
.106(2.7)
.096(2.3)
.094(2.4)
.075(1.9)
.043(1.1)
.035(0.9)
1.193(30.3)
1.169(29.7)
~~_
.402(10.2)
.386(9.8)
.303(7.7).303(7.7)
.287(7.3).287(7.3)
SPACING
.213(5.4)
.197(5.0)
.173(4.4)
.157(4.0)
.114(2.9)
.098(2.5)
.031(0.8)
.023(0.6)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL KBJ6005 KBJ601 KBJ602 KBJ604 KBJ606 KBJ608 KBJ610
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current @ TC=100℃ (without heatsink)
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TJ=25℃
@ TJ=125℃
I²t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
VRMS
30
VDC
50
I(AV)
IFSM
VF
IR
I²t
CJ
RθJC
TJ
TSTG
70
140
280
420
560
700
100
200
400
600
800
1000
6.0
2.8
175
1.0
10
500
120
55
1.8
-55 to +125
-55 to +150
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.
UNIT
V
V
V
A
A
V
uA
A²s
pF
℃/W
℃
℃
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