HERAF1601G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers

HERAF1601G-HERAF1608G
Isolated 16.0AMP. Glass Passivated High Efficient Rectifiers
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
.185(4.7)
.173(4.4)
.124(3.16)
.118(3.00)
ITO-220AC
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.606(15.5)
.583(14.8)
.063(1.6)
MAX
.110(2.8)
.098(2.5)
.030(0.76)
.020(0.50)
.055(1.4)
.043(1.1)
.035(0.9)
.020(0.5)
.161(4.1)
.146(3.7)
.071(1.8) .543(13.8)
MAX
.512(13.2)
2
Cases: ITO-220AC molded plastic
Epoxy: UL 94V0 rate flame retardant
Polarity: As marked
High temperature soldering guaranteed:
260^oC/10 seconds 0.25”,(6.35mm) from case.
Mounting torque : 5 in – 1bs. max.
.100(2.55)
.100(2.55)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ^HERAF
1601G
HERAF
1602G
HERAF
1603G
HERAF
1604G
HERAF
1605G
HERAF
1606G
HERAF
1607G
HERAF
1608G
Units
Maximum Recurrent Peak Reverse Voltage V_RRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
V_RMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
V_DC 50 100 200 300 400 600 800 1000 V
Maximum Average Forward Rectified Current
@TC =100 ^oC
I_(AV)
16
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed
I_FSM
250
A
on Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@16.0A
V_F
1.0
1.3
1.7
V
Maximum DC Reverse Current
@TA=25 ^oC at Rated DC Blocking Voltage
I_R
@ T_A=125 ^oC
10
uA
400
uA
Maximum Reverse Recovery Time ( Note 1 ) Trr
50
80
nS
Typical Junction Capacitance ( Note 2 )
Cj
150
110
pF
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
R_θJC
TJ
TSTG
2.0
-65 to +150
-65 to +150
o_C/W
o_C
o_C
Notes: 1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
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