HERA1601G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 16.0 AMPS. Glass Passivated High Efficient Rectifiers

HERA1601G-HERA1608G
16.0AMP. Glass Passivated High Efficient Rectifiers
TO-220AC
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Cases: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: As marked
High temperature soldering guaranteed:
260^oC/10 seconds .16”,(4.06mm) from case.
Weight: 2.24 grams
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
PIN1
2
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
PIN 1
PIN 2
.025(0.64)
.014(0.35)
CASE
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HERA HERA HERA HERA HERA HERA HERA HERA _Units
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
Maximum Recurrent Peak Reverse Voltage V_RRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
V_RMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
V_DC 50 100 200 300 400 600 800 1000 V
Maximum Average Forward Rectified Current
@TC =100 ^oC
I_(AV)
16
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
I_FSM
250
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@16.0A
V_F
1.0
1.3
1.7
V
Maximum DC Reverse Current
@TA=25 ^oC at Rated DC Blocking Voltage
I_R
@ TA=125 ^oC
Maximum Reverse Recovery Time ( Note 1 ) Trr
10
400
50
uA
uA
80
nS
Typical Junction Capacitance ( Note 2 )
Cj
120
80
pF
Typical Thermal Resistance (Note 3)
R_θJC
2.0
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
o_C/W
o_C
o_C
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