HER601S Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

HER601S-HER608S
High Efficiency Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC DO-27,molded plastic
Polarity: Color band denotes cathode
Weight: 0.046 ounces,1.29grams
Mounting position: Any
DO-27
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER
601S
HER
602S
HER HER HER HER HER HER
603S 604S 605S 606S 607S 608S
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM 50 100 200 300 400 600 800 1000 V
V_RMS 35
70 140 210 280 420 560 700
V
V_DC 50 100 200 300 400 600 800 1000 V
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
6.0
A
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
200.0
A
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 6.0A
V_F
1.0
1.3
1.7
V
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
10.0
200.0
A
Maximum reverse recovery time (Note1)
t_rr
60
70
ns
Typical junction capacitance (Note2)
C_J
100
65
pF
Typical thermal resistance
(Note3)
R_θJA
12
/W
Operating junction temperature range
T_J
- 55 ---- + 150
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
- 55 ---- + 150
3.Thermal resistance junction to ambient.
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