FRA1001G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 10 AMPS. Glass Passivated Fast Recovery Rectifiers

FRA1001G-FRA1007G
10.0AMP. Glass Passivated Fast Recovery Rectifiers
TO-220AC
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
PIN1
2
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free.
Polarity: As marked
High temperature soldering guaranteed:
260 ^oC /10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
.205(5.20)
.195(4.95)
PIN 1
PIN 2
.025(0.64)
.014(0.35)
CASE
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ^{FRA FRA FRA FRA FRA FRA} FRA Units
1001G 1002G 1003G 1004G 1005G 1006G 1007G
Maximum Recurrent Peak Reverse Voltage
V_RRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
V_RMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
V_DC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
@TC = 55 ^oC
I_(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
I_FSM
150
A
(JEDEC method )
Maximum Instantaneous Forward Voltage @ 10A
V_F
Maximum DC Reverse Current @ TC=25 ^oC
at Rated DC Blocking Voltage @ TC=125 ^oC
I_R
1.3
V
5.0
uA
100
uA
Maximum Reverse Recovery Time ( Note 2 )
Trr
150
250
500
nS
Typical Junction Capacitance ( Note 1 ) T_J=25 ^oC
Cj
60
Typical Thermal Resistance ( Note 3 )
R_θJC
3.0
Operating and Storage Temperature Range
TJ ,TSTG
-65 to +150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
pF
o_C/W
o_C
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