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FR1001G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers
FR1001G-FR1007G
Isolated 10AMP. Glass Passivated Fast Recovery Rectifiers
TO-220AB
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: TO-220AB molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free.
Polarity: As marked
High temperature soldering guaranteed:
260oC/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
FR
1001G
FR
1002G
FR
1003G
FR
1004G
FR
1005G
FR
1006G
FR
1007G
Units
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
IFSM
125
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
VF
1.3
V
Maximum DC Reverse Current @ TC=25 oC
at Rated DC Blocking Voltage @ TC=125 oC
IR
Maximum Reverse Recovery Time ( Note 1) Trr
5.0
uA
100
uA
150
250
500
nS
Typical Junction Capacitance (Note 3)
Cj
40
pF
Typical Thermal Resistance RθJC (Note 2) RθJC
3.0
Operating and Storage Temperature Range TJ ,TSTG
-65 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink
Size 2” x 3” x 0.25” Al-Plate.
3. Measured at 1MHz and Applied Reverse Voltage of 4.0 Volts D.C.
oC/W
oC
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