ERC35-02 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

ERC35-02
High Efficiency Rectifier
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Alcohol,Is opropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
VOLTAGE RANGE: 200 V
CURRENT: 2.5 A
DO - 27
Mechanical Data
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERC35 - 02
UNITS
Maximum recurrent peak reverse voltage
V_RRM
200
V
Maximum RMS voltage
V_RMS
140
V
Maximum DC blocking voltage
V_DC
200
V
Maximum average forw ard rectified current
I_F(AV)
2.5
A
9.5mm lead length,
@T_A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
50.0
A
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 2.5A
V_F
1.2
V
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
5.0
100.0
Maximum reverse recovery time (Note1)
t_rr
100
ns
Typical junction capacitance (Note2)
C_J
70
pF
Typical thermal resistance
(Note3)
R_θJA
30
/W
Operating junction temperature range
T_J
- 55 ---- + 150
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
- 55 ---- + 150
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