ERA34-10 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY DIODE

ERA34-10
Fast Recovery Rectifier
VOLTAGE RANGE: 1000 V
CURRENT: 0.1 A
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and similar s olvents
The plas tic m aterial carries U/L recognition 94V-0
DO - 41
Mechanical Data
Case:JEDEC DO-41,m olded plastic
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 gram s
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
ERA34-10
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak f orw ard surge current
V_RRM
V_RMS
V_DC
I_F(AV)
8.3ms single half -sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 0.1 A
I_FSM
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
http://www.luguang.cn
1000
700
1000
0.1
10.0
1.0
5.0
100.0
150
12
55
-55----+150
-55----+150
mail:[e-mail]
UNITS
V
V
V
A
A
V
A
ns
pF
̼ͤ