ERA32-01 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

ERA32-01/ERA32-02
High Efficiency Rectifier
VOLTAGE RANGE: 100 --- 200 V
CURRENT: 1.0 A
DO - 41
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with alcohol,Is opropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC DO--41,molded plastic
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
ERA32 - 01
ERA32 - 02
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V_RMS
V_DC
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
100
200
70
140
100
200
1.0
40.0
0.92
5.0
50.0
50
20
60
- 55 ----- + 150
- 55 ----- + 150
http://www.luguang.cn
mail:[e-mail]
UNITS
V
V
V
A
A
V
ns
pF
/W