EM01Z Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

EM01Z-EM01A
Plastic Silicon Rectifiers
VOLTAGE RANGE: 200 --- 600 V
CURRENT: 1.0 A
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 41
Mechanical Data
Case:JEDEC DO--41,molded plastic
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EM01Z
EM01
EM01A
UNITS
Maximum recurrent peak reverse voltage
V_RRM
200
400
600
V
Maximum RMS voltage
V_RMS
140
280
420
V
Maximum DC blocking voltage
V_DC
200
400
600
V
Maximum average forw ard rectified current
I_F(AV)
1.0
A
9.5mm lead length,
@T_A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
45.0
A
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
V_F
0.97
V
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
5.0
50.0
A
Typical junction capacitance (Note1)
C_J
15
pF
Typical thermal resistance
(Note2)
R_θJA
50
̼ͤ
Operating junction temperature range
T_J
-55----+150
Storage temperature range
T_STG
-55----+150
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
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