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| CJW1012 Datasheet, PDF (1/3 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – N-Channel Power MOSFET | |||
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CJW1012
N-Channel Power MOSFET
FEATURE
z High-Side Switching
z Low On-Resistance
z Low Threshold
z Fast Switching Speed
z ESD protected up to 2kV
SOT-323
APPLICATIONS
z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
Dimensions in inches and (millimeters)
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2 , Ta=25â)
Maximum Power Dissipation (note 3 , Tc=25â)
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Case
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID(DC)
IDM(pulse)
PD
RθJA
RθJC
Tj
Tstg
Value
20
±12
500
1000
150
275
833
455
150
-55 ~+150
Unit
V
mA
mW
â/W
â
http://www.luguang.cn
Email:lge@luguang.cn
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