BYT56A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY ECTIFIERS

Features
Fast recovery times
Ul 90V0 flame retardant epoxy molding compound
Diffused junction
Low cost
High surge current capability
Bevel round chip, aualanche operation
BYT56A-BYT56M
High Efficiency Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
DO - 27
Mechanical Data
Case:JEDEC DO--27,molded plastic
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYT BYT BYT BYT BYT
56A 56B 56D 56G 56J
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM 50
V_RMS 35
V_DC
50
Maximumaverage forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 3.0A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
100 200 400 600
70
140 280 420
100 200 400 600
3.0
150.0
1.4
10.0
150.0
100
75
30
- 55 ---- + 150
- 55 ---- + 150
BYT
56K
800
560
800
50
BYT
56M
1000
700
1000
UNITS
V
V
V
A
A
V
A
ns
pF
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