BC847BV Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

BC847BV
NPN Plastic-Encapsulate Transistors
Features
Halogen free available upon request by adding suffix "-HF"
Epitaxial Die Construction
Complementary PNP Type Available (BC857BV)
Ultra-small Surface Mount Package
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings @ 25^OC Unless Otherwise Specified
Symbol
VCEO
VCBO
VEBO
IC
PC
R©JA
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
45
50
6
0.1
0.15
833
-55 to +150
-55 to +150
Unit
V
V
V
A
W
к/W
к
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
45
---
--- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
50
---
--- Vdc
V(BR)EBO Collector-Emitter Breakdown Voltage
(IE=1uAdc, IC=0)
6
---
--- Vdc
ICBO
Collector Cutoff Current
(VCB=30Vdc, IE=0Vdc)
---
---
15 nAdc
IEBO
Emitter Cutoff Current
(VEB=5Vdc, IC=0Vdc)
---
--- 100 nAdc
hFE
DC Current Gain
(IC=2mAdc, VCE=5Vdc)
200 --- 450 ---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=0.5mAdc)
(IC=100mAdc, IB=5mAdc)
---
--- 100 mVdc
---
--- 300
VBE(sat)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=0.5mAdc)
(IC=100mAdc, IB=5mAdc)
--- 700 --- mVdc
--- 900 ---
Base-Emitter Voltage
VBE
(IC=2mAdc, VCE=5Vdc)
(IC=10mAdc, VCE=5Vdc)
580 660 700 mVdc
770
fT
Transition Frequency
(VCE=5Vdc, IC=10mAdc, f=100MHz)
100 ---
--- MHz
Cob
Output Capacitance
(VCB=10Vdc, f=1.0MHz, IE=0)
---
--- 4.5
pF
Noise Figure
NF
(VCE=5V,BW=200Hz, f=1KHz, RS=2k¡)
---
---
10
dB
SOT-563
1.600
1.200
1.600
0.220
0.500
0.565
Dimensions in inches and (millimeters)
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