BC560 Datasheet, PDF (1/2 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – PNP Epitaxial Silicon Transistor

Switching and Amplifier
• High Voltage: BC556, V_CEO= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
BC556/557/558/559/560
PNP Epitaxial Silicon Transistor
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
V_CEO
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
V_EBO
I_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-50
-30
-65
-45
-30
-5
-100
500
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_CBO
h_FE
V_CE
(sat)
V_BE (sat)
V_BE (on)
f_T
C_ob
NF
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
: BC556/557/558
: BC559/560
: BC559
: BC560
V_CB= -30V, I_E=0
V_CE= -5V, I_C=2mA
I_C= -10mA, I_B= -0.5mA
I_C= -100mA, I_B= -5mA
I_C= -10mA, I_B= -0.5mA
I_C= -100mA, I_B= -5mA
V_CE= -5V, I_C= -2mA
V_CE= -5V, I_C= -10mA
V_CE= -5V, I_C= -10mA, f=10MHz
V_CB= -10V, I_E=0, f=1MHz
V_CE= -5V, I_C= -200µA
f=1KHz, R_G=2KΩ
V_CE= -5V, I_C= -200µA
R_G=2KΩ, f=30~15000MHz
Min.
110
-600
Typ.
-90
-250
-700
-900
-660
150
2
1
1.2
1.2
Max.
-15
800
-300
-650
-750
-800
6
10
4
4
2
Units
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
h_FE Classification
Classification
h_FE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
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