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| BAV99W Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode | |||
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BAV99W
Switching Diode
SOT-323
Features
 For high-speed switching applications
 Connected in series
Dimensions in inches and (millimeters)
MARKING: KJG
Maximum Ratings @TA=25â
Parameter
Symbol
Limits
Unit
Reverse voltage
VR
75
V
Forward current
IO
150
mA
Forward power dissipation
PD
200
mW
Junction temperature
Tj
150
â
Storage temperature
Tstg
-65~150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Reverse breakdown voltage
V(BR) R
IR= 100µA
75
Reverse voltage leakage current
Forward voltage
Diode capacitance
VR=75V
IR
VR=20V
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
CD
VR=0V f=1MHz
Reveres recovery time
IF=IR=10mA
trr
Irr=0.1ÃIR
RL=100â¦
MAX
2.5
25
715
855
1000
1250
2
4
UNIT
V
µA
nA
mV
pF
nS
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mail:lge@luguang.cn
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