BAV99T Datasheet, PDF (1/2 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – Switching Diode

BAW56T/BAV70T/BAV99T
Switching Diode
SOT-523
Features
— Fast Switching Speed
— For General Purpose Switching Applications
— High Conductance
Dimensions in inches and (millimeters)
BAW56T Marking: JD BAV70T Marking: JJ
BAV99T Marking: JE
Maximum Ratings @T_A=25℃
Parameter
Reverse voltage
Forward current
Forward power dissipation
Junction temperature
Storage temperature
Symbol
V_R
I_O
P_D
T_j
T_stg
Limits
85
75
150
150
-65~150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Reverse breakdown voltage
V_(BR)
I_R= 1μA
85
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
I_R1
V_R=75V
I_R2
V_R=25V
I_F=1mA
V_F
I_F=10mA
I_F=50mA
I_F=150mA
C_D
V_R=0 f=1MHz
t _rr
I_F=I_R=10mA
I_rr=0.1×I_R,R_L=100Ω
Unit
V
mA
mW
℃
℃
MAX
2
0.03
715
855
1000
1250
1.5
4
UNIT
V
μA
μA
mV
pF
nS
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