BAV23S Datasheet, PDF (1/3 Pages) NXP Semiconductors – General purpose double diode

BAV23S
Small Signal Diode
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
0.1+0.05
-0.01
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Dimensions in inches and (millimeters)
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 microsecond
Pulse Width = 100 microsecond
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
250
200
9.0
3.0
-55 to +150
150
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient*
Value
350
357
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
V_R
Breakdown Voltage
I_R = 100µA
V_F
Forward Voltage
I_F = 100mA
I_F = 200mA
I_R
Reverse Leakage
V_R = 250V
V_R = 250V, T_A = 150°C
t_rr
Reverse Recovery Time
I_F = I_R = 30mA, I_RR = 3.0mA,
R_L = 100Ω
Min.
250
Max
1.0
1.25
100
100
50
Unit
V
mA
A
A
°C
°C
Unit
mW
°C/W
Units
V
V
V
nA
µA
ns
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