BAT86 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

BAT86
Small Signal Schottky Diodes
VOLTAGE RANGE: 50 V
CURRENT: 0.2 A
Features
For general purpose applications
This diodes features very low turn-on voltage
and fast switching. This devices are protected
by a PN junction guard ring against exces sive
voltage, such as electrostatic discharges
Metal s ilicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
Mechanical Data
Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
DO - 35(GLASS)
Dimensions in millimeters
ABSOLUTE RATINGS
Symbols
Continuous reverse voltage
V_R
Forw ard continuous current @ TA=25
I_F
Repetitive peak forw ard current @ tp<1s, <=0.5,TA=25
I_FRM
Pow er dissipation @ TA=25
P_tot
Junction temperature
T_J
Ambient operating temperature range
T_A
Storage temperature range
T_STG
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Value
50.0
200¹⁾
500¹⁾
200¹⁾
125
c-55 ---+ 125
c-55 ---+ 150
UNITS
V
mA
mA
mw
ELECTRICAL CHARACTERISTICS
Symbols
Min.
Reverse breakdow n voltage tested w ith 100 A pulses
V_R
50.0
Forw ard voltage
Pulse test tp<300 s, <2%
@ IF=0.1mA
@ IF=1mA
V_F
@ IF=10mA
@ IF=30mA
@ IF=100mA
Leakage current VR=40V
I_R
Junction capacitance at VR=1V,f=1MHz
C_J
Reverse recovery time form IF=10mA to IR=10mA to IR=1mA
t_rr
Thermal resistance junction to ambient air
R_θJA
1)Valid provided that leads at a distance of 4mm f rom case are kept at ambient temperature
Typ.
0.2
0.275
0.365
0.46
0.7
Max.
UNITS
V
0.3
V
0.38
V
0.45
V
0.6
V
0.9
V
5.0
A
8
pF
5
ns
300¹⁾
/W
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