BAS40W Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS40W/-04/-05/-06
Schottky Diode
SOT-323
Features
— Low Forward Voltage
— Fast Switching
Dimensions in inches and (millimeters)
BAS40W MARKING: 43• BAS40W-06 MARKING: 46
Maximum Ratings @T_A=25℃
BAS40W-05 MARKING：45
BAS40W-04 MARKING：44
Parameter
Symbol
Limits
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking Voltage
Forward continuous Current
Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction temperature
Storage temperature range
V_RRM
V_RWM
V_R
I_FM
P_D
R_θJA
T_J
T_STG
40
200
150
833
125
-65-125
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Unit
V
mA
mW
℃/W
℃
℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse Recovery time
Symbol
V_(BR)
I_R
V_F
C_D
t _rr
Test conditions
I_R= 10μA
V_R=30V
I_F=1mA
I_F=40mA
V_R=0,f=1MHz
I_rr=1mA, I_R=I_F=10mA
R_L=100Ω
MIN
MAX
UNIT
40
V
200
nA
380
mV
1000
5
pF
5
nS
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