BAS40 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS40 / -04 / -05 / -06
Surface Mount Schottky Barrier Diode
SOT-23
Features
— Low turn-on voltage
— Fast switching
— PN junction guard Ring for transient
Mechanical Data
— Case: SOT-23, Molded plastic
— Marking & Polarity: See diagram below
— Weight: 0.008 grams (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings T_A=25℃ unless otherwise specified
Type Number
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
BAS40
40
Units
V
Forward Continuous Current (Note 1)
IFM
200
mA
Non-Repetitive Peak Forward Surge Current
@ t ≦1.0s
IFSM
600
mA
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance Junction to Ambient Air
(Note 1)
RθJA
357
O_C/W
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics
T_J
T_STG
-55 to + 125
O_C
-65 to + 150
O_C
Type Number
Reverse Breakdown Voltage
IR=10uA
Reverse Leakage Current tp<300us, VR=30V
Symbol
V(BR)
IR
Min
40
--
Typ
Max Units
-
-
V
20
200
nA
Forward Voltage Drop
tp=300us, IF=1.0mA
tp<300us, IF=40mA
VF
Junction Capacitance VR=0, f=1.0MHz
Cj
Reverse Recovery Time (Note 2)
trr
--
-
-
380
1000
mV
-
4.0
5.0
pF
-
--
5.0
nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: I_F=I_R=10mA, Irr=1.0mA, RL=100Ω.
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