BAS16T Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

MMBD4148T/BAS16T
Switching Diode
SOT-523
Features
— _{Fast Switching Speed}
— For General Purpose Switching Applications
— _{High Conductance}
Marking MMBD4148T: KA2, BAS16T:A2
Dimensions in inches and (millimeters)
Maximum Ratings @T_A=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0μs
@=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
Pd
R_θJA
T_j
T_STG
Electrical Ratings @T_A=25℃
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V _{(BR) R}
V_F1
V_F2
V_F3
V_F4
I_R1
I_R2
C_T
Min.
75
Reverse Recovery Time
t_rr
Limits
100
75
53
300
150
2.0
1.0
200
625
150
-65~+150
Typ.
Max. Unit
V
0.715 V
0.855 V
1.0
V
1.25
V
1
μA
25
nA
2
pF
4
ns
Unit
V
V
V
mA
mA
A
mW
K/W
℃
℃
Conditions
I_R=1μA
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
V_R=75V
V_R=20V
V_R=0V,f=1MHz
I_F=I_R=10mA
Irr=0.1XI_R,R_L=100Ω
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