B5817W Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

B5817W-B5819W
Schottky Barrier Diode
+
SOD-123
0.053(1.35)
Max.
0.022(0.55)
Typ. Min.
-
Features
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
0.152(3.85)
0.140(3.55)
0.010(0.25)
Min.
0.112(2.85)
0.100(2.55)
0.006(0.15)
Typ. Min.
0.067(1.70)
0.055(1.40)
MARKING: B5817W: SJ
B5818W:SK
B5819W: SL
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃
Parameter
Symbol B5817W
B5818W
B5819W
Unit
Non-Repetitive Peak reverse voltage
V_RM
20
30
40
V
Peak repetitive Peak reverse voltage
V_RRM
Working Peak Reverse Voltage
DC Blocking Voltage
V_RWM
20
30
40
V
V_R
RMS Reverse Voltage
V_R(RMS)
14
21
28
V
Average Rectified Output Current
I_O
1
A
Peak forward surge current @=8.3ms
I_FSM
25
A
Repetitive Peak Forward Current
I_FRM
625
mA
Power Dissipation
Pd
250
mW
Thermal Resistance Junction to
Ambient
R_θJA
500
K/W
Storage temperature
T_STG
-65~+150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
Test conditions
MIN
V_(BR)
I_R
I_R= 1mA
V_R=20V
V_R=30V
V_R=40V
B5817W
20
B5818W
30
B5819W
40
B5817W
B5818W
B5819W
B5817W I_F=1A
I_F=3A
V_F
B5818W I_F=1A
I_F=3A
B5819W I_F=1A
I_F=3A
C_D
V_R=4V, f=1MHz
MAX
UNIT
V
1
mA
0.45
V
0.75
0.55
V
0.875
0.6
V
0.9
120
pF
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