3JH61 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – FAST RECOVERY DIODE

3JH61
Fast Recovery Rectifier
VOLTAGE RANGE: 600 V
CURRENT: 3.0 A
Features
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
DO - 27
Mechanical Data
Cas e:JEDEC DO-27,m olded plas tic
Polarity: Color band denotes cathode
Weight:0.041 ounces ,1.15 gram s
Mounting pos ition: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
3JH61
UNITS
Maximum recurrent peak reverse voltage
V_RRM
600
V
Maximum RMS voltage
V _{R MS}
420
V
Maximum DC blocking voltage
V_DC
600
V
Maximum average forw ard rectified current
I_{F (AV)}
3.0
A
9.5mm lead length,
@T_A=75
Peak forw ard surge current
8.3ms single half -sine-w ave
I_{F SM}
200.0
A
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 3.0 A
V_F
1.2
V
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC .
3. Thermal resistance f rom junction to ambient.
10.0
200.0
500
32
22
- 55---- +150
- 55---- +150
A
ns
pF
/W
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