1SS387 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

1SS387
High Speed Switching Diodes
SOD-523
Features
— Low forward voltage.
— _{Fast reverse recovery time.}
— Small total capacitance.
Applications
— High-speed switching in surface mounted circuits.
Dimensions in inches and (millimeters)
Ordering Information
Type No.
1SS387
Marking
G
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Repetitive peak reverse voltage
V_RRM
85
V
Reverse voltage
V_R
80
V
Continuous forward current
Surge current
I_F
100
mA
I_FSM
1
A
Total power dissipation
P_tot
150
mW
Junction temperature
T_j
125
℃
Storage temperature
T_stg
-55-125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol Min. Typ. Max. Unit
0.62
V
V_F
0.75
V
0.98 1.2 V
0.1 μA
I_R
0.5 μA
C_d
0.5 3
pF
t_rr
1.6 4
ns
Conditions
I_F=1mA
I_F=10mA
I_F=100mA
V_R=30V
V_R=80V
V_R=0,f=1MHz
I_F=10mA
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