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1SS344 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | |||
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1SS344
Surface Mount Schottky Planar Diode
SOT-23
Features
 Fast reverse recovery time:trr=20ns(typ).
 Low forward voltage:VF=0.50V (typ).
 High average forward current:IO=0.5A(max.)
Applications
 Ultra high speed switching application.
Ordering Information
Dimensions in inches and (millimeters)
Type No.
1SS344
Marking
H9
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
VRM
25
V
DC Reverse Voltage
VR
20
V
Forward Current(max)
Average forward Output current
IFM
1500
mA
Io
500
mA
Peak forward surge current
@=1.0ms IFSM
5
A
Power Dissipation
Pd
200
mW
Operating Junction Temperature Range
Tj
125
â
Storage Temperature Range
TSTG
-55 to +125
â
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Characteristic
Forward Voltage
Reverse Leakage Current
Diode Capacitance
Reverse Recovery Time
Symbol
VF
IR
CD
trr
Min.
Typ.
0.30
0.38
0.50
120
20
MAX.
0.55
20
100
UNIT
V
μA
pF
ns
Test Condition
IF=10mA
IF=100mA
IF=500mA
VR=10V
VR=20V
VR=0V,f=1MHz
IF=IR=10mAIrr=0.1*IR
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