1SS226 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

1SS226
Switching Diodes
SOT-23
Features
— Low forward voltage : VF (3) = 0.9V (typ.)
— Fast reverse recovery time : t_rr = 1.6ns (typ.)
— Small total capacitance : C_T = 0.9pF (typ.)
MARKING: C3
Maximum Ratings ,Single Diode @T_A=25℃
Dimensions in inches and (millimeters)
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0μs
@=1.0s
Power Dissipation
Junction temperature
Storage temperature
Symbol
V_RM
V_RRM
V_RWM
V_R
I_FM
I_O
I_FSM
P_D
T_J
T_STG
Limits
85
80
300
100
2
150
150
-55-150
Unit
V
V
mA
mA
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
Test conditions
V_(BR)
I_R= 100uA
I_R
V_R=80V
V_F
I_F=100mA
C_D
V_R=0V , f=1MHz
t _rr
I_F=10mA
MIN
MAX
UNIT
80
V
0.5
uA
1.2
V
3
pF
4
nS
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