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1SS196 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
1. N.C.
2. ANODE
3. CATHODE
Features
— Low forward voltage
: VF(3)=0.9V(typ.)
— Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: G3
Maximum Ratings @TA=25℃
Parameter
Non-Repetitive Peak reverse voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Power Dissipation
Junction temperature
Storage temperature range
Symbol
VRM
VR
IFM
IO
PD
TJ
TSTG
1SS196
Switching Diodes
SOT-23
Dimensions in inches and (millimeters)
Limits
85
80
300
100
150
125
-55-125
Unit
V
V
mA
mA
mW
℃
℃
Electrical Characteristics @TA=25℃
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V (BR)R
VF1
VF2
VF3
IR1
IR2
CT
t rr
Min.
80
Typ.
0.60
0.72
0.90
0.9
1.6
Max. Unit
V
V
V
1.2
V
0.1
uA
0.5
uA
3.0
pF
4.0
ns
Conditions
IR=100µA
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0,f=1MHz
IF=IR=10mA,Irr=0.1×IR
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