1SS187 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

1. CATHODE
2. N.C.
3. ANODE
Features
— Low forward voltage
: V_F(3)=0.92V(typ.)
— Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: D3
1SS187
Switching Diodes
SOT-23
Maximum Ratings @T_A=25℃
Parameter
Non-Repetitive Peak reverse voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Power Dissipation
Junction temperature
Storage temperature range
Symbol
V_RM
V_R
I_FM
I_O
P_D
T_J
T_STG
Dimensions in inches and (millimeters)
Limits
Unit
85
V
80
V
300
mA
100
mA
150
mW
125
℃
-55-125
℃
Electrical Characteristics @T_A=25℃
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V _(BR)R
V_F1
V_F2
V_F3
I_R1
I_R2
C_T
t _rr
Min.
80
Typ.
0.61
0.74
0.92
2.2
1.6
Max. Unit
V
V
V
1.2
V
0.1
uA
0.5
uA
4.0
pF
4.0
ns
Conditions
I_R=100μA
I_F=1mA
I_F=10mA
I_F=100mA
V_R=30V
V_R=80V
V_R=0,f=1MHz
I_F=I_R=10mA,I_rr=0.1×I_R
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