1S2076A Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

1S2076A
Features
• Low capacitance. (C = 3.0pF max)
• Short reverse recovery time. (t_rr = 8.0ns max)
• High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Note: Within 1s forward surge current.
Symbol
V_RM
V_R
I _FM
I _FSM *
I_O
Pd
Tj
Tstg
1
Value
70
60
450
1
150
250
175
–65 to +175
2
Cathode band
1. Cathode
2. Anode
Unit
V
V
mA
A
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Forward voltage
Reverse current
Capacitance
V_F
0.64 —
I_R
—
—
C
—
—
Reverse recovery time t_rr*
—
—
Note: Reverse recovery time test circuit
Max
0.80
0.1
3.0
8.0
Unit
V
µA
pF
ns
Test Condition
I_F = 10mA
V_R = 30V
V_R = 1V, f = 1MHz
I_F = I_R = 10mA, Irr = 1mA
Ordering Information
Type No.
1S2076A
Cathode band
Navy Blue
Package Code
DO-35
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