1N6263 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

Features
For general purpose applications
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
Mechanical Data
Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
1N6263
Small Signal Schottky Diodes
VOLTAGE RANGE: 60 V
POWER DISSIPATION:400 mW
DO - 35(GLASS)
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Maximum single cycle surge 10_µs square w ave
Junction tenperature
Storage temperature range
1)Valid provided that electrodes are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Symbols
Reverse breakdow n voltage @ I_R=10 A
Leakage current @ V_R=50V
Forw ard voltage drop @ I_F=1mA
I_F=15mA
Junction capacitance @ VR=0V,f=1MHz
Reverse recovery time @ I_F=I_R=5mA,recover to 0.1 IR
Termal resistance junction to ambient air
V_R
I_R
V_F
V_F
C_J
t_rr
R_θJA
Symbols
V_RRM
P_tot
I_FSM
T_J
T_STG
Value
60.0
400¹⁾
2.0
125
c-55 ---+ 150
UNITS
V
mW
A
Min.
Typ.
Max.
UNITS
60.0
V
200.0
nA
0.41
V
1.0
V
2.2
pF
1
ns
0.3
/mW
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