1N5913A Datasheet, PDF (1/3 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES

1N5913A-1N5956A
Zener Diodes
POWER DISSIPATION: 1.5W
DO - 41
Features
Silicon planar power zener diodes
No suffix indicates a ±20% tolerance on nominal Vz.
Suffix "A" denotes a 1 0%,Suffix "B" denotes a 5%,
Suffix "C" denotes a 2%,Suffix "D" denotes a 1%.
Mechanical Data
Case:DO-41
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.339 grams
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SYMBOL
VALUE
UNIT
Zener current (see Table "Characteristics")
Pow er dissipation at T_amb=25
Ptot
1.5¹⁾
W
Junction temperature
TJ
150
Storage temperature range
TSTG
-55---+150
SYMBOL
MIN
TYP
Thermal resistance junction to lead
R_θJL
Forw ard voltage at IF=200mA
V_F
NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
MAX
45¹⁾
1.2
UNIT
/W
V
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