1N5712 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – SMALL SIGNAL SCHOTTKY DIODES

Features
Metal-to-silicon junction
High breakdown voltage
Low turn-on voltage
Ultrafast switching speed
Prmarly intended for high level UHF/VHF detection
and pulse applications with broad dynamic range
Mechanical Data
Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Forw ard continuous current
Junction and storage temperature range
Maximumlead temperature for soldering during 10S at 4mmfromcase
1N5712
Small Signal Schottky Diodes
VOLTAGE RANGE: 20 V
POWER DISSIPATION: 430 mW
DO - 35(GLASS)
Dimensions in millimeters
Symbols
V_RRM
P_tot
I_FSM
T_J/T_STG
T_L
Value
20.0
430.0
35.0
c-55 ---+ 150
230
UNITS
V
mW
mA
ELECTRICAL CHARACTERISTICS
Reverse breakdow n voltage @ I_R=10 A
Leakage current
@ VR=16V
Forw ard voltage drop @ IF=1mA
Test pulse: tp 300 s <2% IF=35mA
Junction capacitance @ VR=0V,f=1MHz
Thermal resistance
Symbols
Min.
Typ.
Max. UNITS
V_R
I_R
V_F
C_J
R_θJA
20.0
V
150
nA
0.41
V
1.0
2
pF
400
K/W
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