1N4154 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

Features
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
1N4154
Small Signal Switching Diodes
REVERSE VOLTAGE : 25 V
CURRENT: 0.15 A
DO-35
Mechanical Data
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
V_R
V_RM
half w ave rectif ication w ith resistive load
I_F(AV)
V_R=0V
Forw ard surge current @ tP=1µ s
I_FSM
Pow er dissipation
@ T_A=
P_tot
Junction temperature
T_J
Storage temperature range
T_STG
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
MIN
Forw ard voltage @ I_F=30mA
Leakage current
V_F
-
@ V_R=25V
I_R
-
@ V_R=25V T_J=150
I_R
-
Capacitance @ V_R=0V,f=1MHz,V_HF=50mV
CJ
-
Reverse breakdown voltage
tested with 5μA pulses
V_(BR)R
35
Reverse recovery time
from I_F=10mA to I_R=10mA to I_R=1mA
from I_F=10mA to I_R=1mA, V_R=6V. R_L=100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,V_RF=2V
t_rr
R_θJA
ηv
-
0.45
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
1N4154
25
35
150¹⁾
2.0
500¹⁾
175
-55 --- +175
TYP
-
-
-
-
-
-
-
MAX
1.0
100
100
4.0
-
4
2
500¹⁾
-
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UNITS
V
V
mA
A
mW
UNITS
V
nA
μA
pF
V
ns
ns
K/W
-