1N4151 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes

Features
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
Mechanical Data
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
1N4151
Small Signal Switching Diodes
REVERSE VOLTAGE : 50 V
CURRENT: 0.15 A
DO-35(GLASS)
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
V_R
V_RM
half w ave rectification w ith resistive load
I_AV
@ T_A=
and f 50Hz
Forw ard surge current @ t<1s and T_J=
I_FSM
Pow er dissipation
@ T_A=
P_tot
Junction temperature
T_J
Storage temperature range
T_STG
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
MIN
Forw ard voltage @ I_F=10mA
Leakage current
V_F
-
@ V_R=50V
@ V_R=20V T_J=150
Capacitance @ V_F=V_R=0V
Reverse breakdow n voltage
tested w ith 5μA pulses
I_R
I_R
C_J
V_(BR)R
-
-
-
75.0
Reverse recovery time
from I_F=10mA to I_R=10mA to I_R=1mA
from I_F=10mA to I_R=1mA, V_R=6V. R_L=100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,V_RF=2V
t_rr
R_θJA
ηv
-
0.45
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
1N4151
50.0
75.0
150¹⁾
500.0
500¹⁾
175
-55 --- +175
TYP
-
-
-
-
-
-
-
UNITS
V
V
mA
mA
mW
MAX
1.0
50.0
50.0
2
-
4
2
350¹⁾
-
UNITS
V
nA
μA
pF
V
ns
ns
K/W
-
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