1A10F Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PHOTO FLASH RECTIFIER

1A10F-1A18F
Photo Flash Rectifiers
VOLTAGE RANGE: 1000 --- 1800 V
CURRENT: 1.0A
Features
Fast switching
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol and
similar solvents
Mechanical Data
Case: JEDEC R--1,molded plastic
Polarity: Color band denotes cathode
Weight: 0.007ounces, 0.20 grams
Mounting position: Any
R-1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by 20%.
1A10F 1A12F 1A14F 1A15F 1A16F 1A18F UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM 1000 1200 1400 1500 1600 1800
V
V_RMS 700 840 980 1050 1120 1260
V
V_DC 1000 1200 1400 1500 1600 1800
V
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
1.0
A
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
30.0
A
superimposed on rated load T_J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
V_F
1.3
1.8
V
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
5.0
100.0
μA
Maximum reverse recovery time (NOTE1)
t_rr
300
ns
Typical junction capacitance
(NOTE2)
C_J
15
pF
Operating junction temperature range
T_J
-55 ---- + 150
Storage temperature range
T_STG
-55 ---- + 150
NOTE: 1. Rev erse recov ery test conditions:I_F=0.5A,I_R=-1.0A,I_RR=-0.25A.
2. Mersured at 1MH_Z and applied rev erse v oltage of 4.0V.
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