12SQ030 Datasheet, PDF (1/2 Pages) HY ELECTRONIC CORP. – SCHOTTKY BARRIER RECTIFIERS

12SQ030 thru 12SQ100
SCHOTTKY BARRIER RECTIFIERS
R-6
FEATURES
●Metal of silicon rectifier , majority carrier conduction
●Guard ring for transient protection
●Low power loss,high efficiency
●High current capability,low VF
●High surge capacity
●For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
.
.
MECHANICAL DATA
●Case: JEDEC R-6 molded plastic
●Polarity: Color band denotes cathode
●Weight: 0.07 ounces , 2.1 grams
●Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@Tc=95 ℃
SYMBOL 12SQ030 12SQ035 12SQ040 12SQ045 12SQ050 12SQ060 12SQ080 12SQ100 UNIT
VRRM
30
35
40
45
50
60
80
100
V
VRMS
21
24.5
28
31.5
35
42
56
70
V
VDC
30
35
40
45
50
60
80
100
V
I(AV)
12
A
Peak Forward Surge Current 8.3ms single half sine-
wave super imposed on rated load(JEDEC Method)
IFSM
275
A
Peak Forward Voltage at 12A DC(Note1)
Maximum DC Reverse Current @Tj=25℃
at Rated DC Bolcking Voltage @Tj=125℃
Tyical Junction Capacitance (Note2)
Tyical Thermal Resistance (Note3)
Junction temperature Range
in DC forward mode
VF
IR
CJ
RθJC
TJ
0.55
0.7
0.1
50
450
3.0
-55 to+200
0.8
V
mA
pF
℃/w
℃
Storage Temperature Range
Ts
-55 to+175
℃
ESD
NOTES:1.300us Pulse Width, 2%Duty Cycle.
VESD
15000
V
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
3.Thermal Resistance Junction to case.
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