VS-MUR1620CTPBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Ultrafast Rectifier, 2 x 8 A FRED Pt®

VS-MUR1620CTPbF, VS-MUR1620CT-N3
Ultrafast Rectifier, 2 x 8 A FRED Pt^®
TO-220AB
Base
common
cathode
2
2
Common
Anode ^cathode Anode
1
3
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
TO-220AB
2x8A
200 V
0.975 V
See Recovery table
175 °C
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION/APPLICATIONS
VS-MUR1620CTPbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per leg
total device
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
SYMBOL
V_RRM
I_F(AV)
I_FSM
I_FM
T_J, T_Stg
TEST CONDITIONS
Rated V_R, T_C = 150 °C
Rated V_R, square wave, 20 kHz, T_C = 150 °C
MAX.
200
8.0
16
100
16
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
200
I_F = 8 A
-
Forward voltage
V_F
I_F = 8 A, T_J = 150 °C
-
V_R = V_R rated
-
Reverse leakage current
I_R
T_J = 150 °C, V_R = V_R rated
-
Junction capacitance
C_T
V_R = 200 V
-
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
TYP.
-
-
-
-
-
25
8.0
MAX.
-
0.975
0.895
5
250
-
-
UNITS
V
μA
pF
nH
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